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Teilenummer | P0510AT |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P0510AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
5.5mΩ @VGS = 10V
ID
132A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±25
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
132
83
350
Avalanche Current
IAS 36
Avalanche Energy
L = 1mH
EAS 648
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
192
77
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 111A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
0.65
°C / W
62.5
REV 1.0
1 2015/10/15
P0510AT
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:50pcs/Tube
REV 1.0
6 2015/10/15
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P0510AT Schematic.PDF ] |
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