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Teilenummer | PD6D2BA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten PD6D2BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 25mΩ @VGS = 10V
ID
21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
21
13
50
Avalanche Current
IAS 13
Avalanche Energy
L = 0.1mH
EAS
8.4
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
24
9.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 15A.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM UNITS
62.5
°C / W
5.2
REV 1.0
1 2016/12/23
PD6D2BA
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
REV 1.0
6 2016/12/23
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ PD6D2BA Schematic.PDF ] |
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