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Teilenummer | PD6A8BA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten PD6A8BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 6.2mΩ @VGS = 10V
ID
75A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
75
47
120
Avalanche Current
IAS 35
Avalanche Energy
L =0.1mH
EAS
61.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
73
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2 Package limitation current is 55A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.0
1 2014/10/14
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PD6A8BA Schematic.PDF ] |
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