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Teilenummer | PD516BA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten PD516BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.5mΩ @VGS = 10V
ID
55A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
55
35
150
Avalanche Current
IAS 24
Avalanche Energy
L=0.1mH
EAS
28.7
Power Dissipation
TC= 25 °C
TC= 100°C
PD
39
15
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient
RqJA
Junction-to-Case
1Pulse width limited by maximum junction temperature.
RqJC
2Calculated continuous current based on maximum allowable junction temperature,
Package limitation current is 40A.
MAXIMUM
62.5
3.2
UNITS
°C / W
REV 1.0
1 2014/5/15
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PD516BA Schematic.PDF ] |
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