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Teilenummer | P2904BD |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P2904BD
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 29mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA= 70 °C
ID
IDM
25
20
75
Avalanche Current
IAS 27
Avalanche Energy2
L=0.1mH
EAS
37
Power Dissipation
TC= 25 °C
TC= 70°C
PD
30
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNIT
4.1 S
°C / W
40
REV 1.0
1 2014/5/12
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P2904BD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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