(PDF) P2504EDG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P2504EDG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
Logotipo
Hay una vista previa y un enlace de descarga de P2504EDG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 25.8mΩ @VGS = -10V ID -18A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -18 -13.5 -40 A Power Dissipation TC = 25 °C TC = 70 °C PD 42 W 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W REV 1.2 1 2016/5/11 1 page P2504EDG P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2016/5/11 5 Page

Páginas	Total 8 Páginas
PDF Descargar	[ Datasheet P2504EDG.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF P2504EDG Data sheet ( Hoja de datos )