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PDF EDD1216AASE Data sheet ( Hoja de datos )
| Número de pieza | EDD1216AASE | |
| Descripción | 128M bits DDR SDRAM | |
| Fabricantes | Elpida Memory | |
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PRELIMINARY DATA SHEET
128M bits DDR SDRAM
EDD1216AASE (8M words × 16 bits)
Description
The EDD1216AASE is a 128M bits Double Data Rate
(DDR) SDRAM organized as 2,097,154 words × 16 bits
× 4 banks. Read and write operations are performed at
the cross points of the CK and the /CK. This high-
speed data transfer is realized by the 2 bits prefetch-
pipelined architecture. Data strobe (DQS) both for
read and write are available for high speed and reliable
data bus design. By setting extended mode register,
the on-chip Delay Locked Loop (DLL) can be set
enable or disable. It is packaged in 60-ball FBGA
(µBGA) package.
Features
• Power supply : VDDQ = 2.5V ± 0.2V
: VDD = 2.5V ± 0.2V
• Data rate: 333Mbps/266Mbps (max.)
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
• Data inputs, outputs, and DM are synchronized with
DQS
• 4 internal banks for concurrent operation
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• SSTL_2 compatible I/O
• Programmable burst length (BL): 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Programmable output driver strength: normal/weak
• Refresh cycles: 4096 refresh cycles/64ms
15.6µs maximum average periodic refresh interval
• 2 variations of refresh
Auto refresh
Self refresh
• FBGA (µBGA) package with lead free solder
(Sn-Ag-Cu)
Pin Configurations
/xxx indicates active low signal.
60-ball FBGA ( BGA)
123456789
A
VSSQ DQ15 VSS
B
DQ14 VDDQ DQ13
C
DQ12 VSSQ DQ11
D
DQ10 VDDQ DQ9
E
DQ8 VSSQ UDQS
F
VREF VSS UDM
G
CK /CK
H
NC CKE
J
A11 A9
K
A8 A7
L
A6 A5
M
A4 VSS
VDD DQ0 VDDQ
DQ2 VSSQ DQ1
DQ4 VDDQ DQ3
DQ6 VSSQ DQ5
LDQS VDDQ DQ7
LDM VDD NC
/WE /CAS
/RAS /CS
BA1 BA0
A0 A10
(AP)
A2 A1
VDD A3
A0 to A11
BA0, BA1
DQ0 to DQ15
UQQS/LDQS
/CS
/RAS
/CAS
/WE
UDM/LDM
CK
/CK
CKE
VREF
VDD
VSS
VDDQ
VSSQ
NC
(Top view)
Address inputs
Bank select address
Data-input/output
Input and output data strobe
Chip select
Row address strobe
Column address strobe
Write enable
Input mask
Clock input
Differential clock input
Clock enable
Input reference voltage
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Document No. E0614E20 (Ver. 2.0)
Date Published March 2005 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2004-2005
1 page  
EDD1216AASE
DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol
Grade max.
Unit Test condition
Operating current (ACT-PRE) IDD0
Operating current
(ACT-READ-PRE)
Idle power down standby
current
Floating idle standby current
IDD1
IDD2P
IDD2F
Quiet idle standby current
Active power down standby
current
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
Auto Refresh current
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
Self refresh current
Operating current
(4 banks interleaving)
IDD6
IDD7A
110
mA
CKE ≥ VIH,
tRC = tRC (min.)
CKE ≥ VIH, BL = 4,
140 mA CL = 2.5,
tRC = tRC (min.)
3 mA CKE ≤ VIL
35
mA
CKE ≥ VIH, /CS ≥ VIH
DQ, DQS, DM = VREF
30
mA
CKE ≥ VIH, /CS ≥ VIH
DQ, DQS, DM = VREF
20 mA CKE ≤ VIL
55
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
205
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
205
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
200
mA
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
3
mA
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
350 mA BL = 4
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycle.
10. Command/Address stable at ≥ VIH or ≤ VIL.
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol min.
max.
Unit Test condition
Input leakage current
Output leakage current
Output high current
Output low current
ILI –2
ILO –5
IOH –15.2
IOL 15.2
2
5
—
—
µA VDD ≥ VIN ≥ VSS
µA VDDQ ≥ VOUT ≥ VSS
mA VOUT = 1.95V
mA VOUT = 0.35V
Notes
1, 2, 9
1, 2, 5
4
4, 5
4, 10
3
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
1, 5, 6, 7
Note
Preliminary Data Sheet E0614E20 (Ver. 2.0)
5
5 Page 
EDD1216AASE
Pin Function
CK, /CK (input pins)
The CK and the /CK are the master clock inputs. All inputs except DM, DQS and DQs are referred to the cross point
of the CK rising edge and the /CK falling edge. When a read operation, DQS and DQs are referred to the cross point
of the CK and the /CK. When a write operation, DQS and DQs are referred to the cross point of the DQS and the
VREF level. DQS for write operation is referred to the cross point of the CK and the /CK. CK is the master clock
input to this pin. The other input signals are referred at CK rising edge.
/CS (input pin)
When /CS is Low, commands and data can be input. When /CS is High, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See "Command operation".
A0 toA11 (input pins)
Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of the CK rising edge and the
/CK falling edge in a bank active command cycle. Column address (See “Address Pins Table”) is loaded via the A0
to the A8 at the cross point of the CK rising edge and the /CK falling edge in a read or a write command cycle. This
column address becomes the starting address of a burst operation.
[Address Pins Table]
Address (A0 to A11)
Part number
Row address
Column address
EDD1216AASE
AX0 to AX11
AY0 to AY8
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low when a precharge
command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = High when read or write
command, auto-precharge function is enabled. While A10 = Low, auto-precharge function is disabled.
BA0 and BA1 (input pins)
BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See
Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Remark: H: VIH. L: VIL.
Preliminary Data Sheet E0614E20 (Ver. 2.0)
11
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| PDF Descargar | [ Datasheet EDD1216AASE.PDF ] | |
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