|
|
PDF EM488M1644VTB Data sheet ( Hoja de datos )
| Número de pieza | EM488M1644VTB | |
| Descripción | 128Mb Synchronous DRAM | |
| Fabricantes | Eorex | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de EM488M1644VTB (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
|
No Preview Available !
eorex
EM488M1644VTB
128Mb (2M×4Bank×16) Synchronous DRAM
Features
• Fully Synchronous to Positive Clock Edge
• Single 3.3V ±0.3V Power Supply
• LVTTL Compatible with Multiplexed Address
• Programmable Burst Length (B/L) - 1, 2, 4, 8
or Full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
– Sequential (B/L = 1/2/4/8/full Page)
– Interleave (B/L = 1/2/4/8)
• Burst Read with Single-bit Write Operation
• All Inputs are Sampled at the Rising Edge of
the System Clock
• Auto Refresh and Self Refresh
• 4,096 Refresh Cycles / 64ms (15.6us)
Description
The EM488M1644VTB is Synchronous Dynamic
Random Access Memory (SDRAM) organized as
2Meg words x 4 banks by 16 bits. All inputs and
outputs are synchronized with the positive edge of
the clock.
The 128Mb SDRAM uses synchronized pipelined
architecture to achieve high speed data transfer
rates and is designed to operate at 3.3V low power
memory system. It also provides auto refresh with
power saving / down mode. All inputs and outputs
voltage levels are compatible with LVTTL.
Available packages:TSOPII 54P 400mil.
Ordering Information
Part No
EM488M1644VTB-75F
EM488M1644VTB-7F
EM488M1644VTB-6F
Organization
8M X 16
8M X 16
8M X 16
Max. Freq
133MHz @CL3
143MHz @CL3
166MHz @CL3
Package
54pin TSOP(ll)
54pin TSOP(ll)
54pin TSOP(ll)
Grade
Commercial
Commercial
Commercial
Pb
Free
Free
Free
* EOREX reserves the right to change products or specification without notice.
Dec. 2006
1/17
www.eorex.com
1 page  
eorex
EM488M1644VTB
Recommended DC Operating Conditions
(VDD=3.3V±0.3V, TA=0°C ~ 70°C)
Symbol
Parameter
Test Conditions
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
Operating Current (Note 1)
Precharge Standby Current in
Power Down Mode
Precharge Standby Current in
Non-power Down Mode
Active Standby Current in
Power Down Mode
Active Standby Current in
Non-power Down Mode
Operating Current (Burst
Mode) (Note 2)
Refresh Current (Note 3)
Burst length=1,
tRC≥tRC(min.), IOL=0mA,
One bank active
CKE≤VIL(max.), tCK=15ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=15ns,
/CS≥VIH(min.)
Input signals are changed
one time during 30ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
CKE≤VIL(max.), tCK=15ns
CKE≤VIL(max.), tCK= ∞
CKE≥VIL(min.), tCK=15ns,
/CS≥VIH(min.)
Input signals are changed
one time during 30ns
CKE≥VIL(min.), tCK= ∞ ,
Input signals are stable
tCCD≥2CLKs, IOL=0mA
tRC≥tRC(min.)
ICC6 Self Refresh Current
CKE≤0.2V
*All voltages referenced to VSS.
Note 1: ICC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 2: ICC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 3: Input signals are changed only one time during tCK (min.)
Max.
75
1
1
20
15
7
5
45
35
110
150
2
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IIL Input Leakage Current
0≤VI≤VDDQ, VDDQ=VDD
All other pins not under test=0V
-0.5
IOL Output Leakage Current
0≤VO≤VDDQ, DOUT is disabled
-0.5
VOH High Level Output Voltage IO=-4mA
2.4
+0.5
+0.5
uA
uA
V
VOL Low Level Output Voltage IO=+4mA
0.4 V
Dec. 2006
5/17
www.eorex.com
5 Page 
eorex
EM488M1644VTB
Burst Type (A3)
Burst Length
A2 A1 A0
Sequential Addressing
Interleave Addressing
XX0
01
2
XX0
10
01
10
X00
0123
0123
X01
1230
4
X10
2301
1032
2301
X11
3012
3210
000
01234567
01234567
001
12345670
10325476
010
23456701
23016745
011
34567012
8
100
45670123
32107654
45670123
101
56701234
54761032
110
67012345
67452301
111
70123456
76543210
Full Page*
nnn
Cn Cn+1 Cn+2……
-
* Page length is a function of I/O organization and column addressing ×16 (CA0 ~ CA8):
Full page = 512bits
1. Command Truth Table
Command
Symbol
CKE
n-1 n
/CS
/RAS
/CAS
/WE
BA0,
BA1
A10
A11,
A9~A10
Ignore Command
DESL H X H X
X XXX
X
No Operation
NOP H X L H
H HXX
X
Burst Stop
BSTH H X L H H L X X
X
Read
READ H X L H
L HVL
V
Read with Auto Pre-charge READA H X L H
L HVH
V
Write
WRIT H X L H L L V L
V
Write with Auto Pre-charge WRITA H X L L
H HVH
V
Bank Activate
ACT H X L L
H HVV
V
Pre-charge Select Bank
PRE H X L L
H L VL
X
Pre-charge All Banks
PALL H X L L
H L XH
X
Mode Register Set
MRS H X L L
L LLL
V
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
Dec. 2006
11/17
www.eorex.com
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet EM488M1644VTB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| EM488M1644VTB | 128Mb Synchronous DRAM | Eorex |
| EM488M1644VTE | 128Mb Synchronous DRAM | Eorex |
| EM488M1644VTF | 128Mb (2M x 4Bank x 16) Synchronous DRAM | Eorex |
| EM488M1644VTG | 128Mb Synchronous DRAM | Eorex |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |