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EM484M3244VBE Schematic ( PDF Datasheet ) - Eorex

Teilenummer EM484M3244VBE
Beschreibung 128Mb Synchronous DRAM
Hersteller Eorex
Logo Eorex Logo 




Gesamt 18 Seiten
EM484M3244VBE Datasheet, Funktion
eorex
Revision History
Revision 0.1 (Dec. 2013)
- First release
EM484M3244VBE
Dec. 2013
www.eorex.com
1/18






EM484M3244VBE Datasheet, Funktion
eorex
EM484M3244VBE
Recommended DC Operating Conditions
(VDD=3.3V0.3V, TA=0°C ~70°C)
Symbol
Parameter
Test Conditions
ICC1
ICC2P
ICC2PS
ICC2N
ICC2NS
ICC3P
ICC3PS
ICC3N
ICC3NS
ICC4
ICC5
Operating Current (Note 1)
Precharge Standby Current in
Power Down Mode
Precharge Standby Current in
Non-power Down Mode
Active Standby Current in
Power Down Mode
Active Standby Current in
Non-power Down Mode
Operating Current (Burst
Mode) (Note 2)
Refresh Current (Note 3)
Burst length=1,
tRCtRC(min.), IOL=0mA,
One bank active
CKEVIL(max.), tCK=15ns
CKEVIL(max.), tCK=
CKEVIL(min.), tCK=15ns,
/CSVIH(min.)
Input signals are changed
one time during 30ns
CKEVIL(min.), tCK= ,
Input signals are stable
CKEVIL(max.), tCK=15ns
CKEVIL(max.), tCK=
CKEVIL(min.), tCK=15ns,
/CSVIH(min.)
Input signals are changed
one time during 30ns
CKEVIL(min.), tCK= ,
Input signals are stable
tCCD2CLKs, IOL=0mA
tRCtRC(min.)
ICC6 Self Refresh Current
CKE0.2V
*All voltages referenced to VSS.
Note 1: ICC1 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 2: ICC4 depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during tCK (min.)
Note 3: Input signals are changed only one time during tCK (min.)
Note 4: Standard power version.
Max.
60
200
150
15
8
2
1.6
20
12
80
100
250 (Note 4)
Units
mA
uA
uA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
IIL Input Leakage Current
IOL Output Leakage Current
VOH High Level Output Voltage
VOL Low Level Output Voltage
Test Conditions
0VIVDDQ, VDDQ=VDD
All other pins not under test=0V
0VOVDDQ, DOUT is disabled
IO=-2mA
IO=+2mA
Min. Typ. Max. Units
-1 +1 uA
-1.5 +1.5 uA
2.4 V
0.4 V
Dec. 2013
www.eorex.com
6/18

6 Page









EM484M3244VBE pdf, datenblatt
eorex
EM484M3244VBE
Burst Type (A3)
Burst Length
A2 A1 A0
Sequential Addressing
Interleave Addressing
2
XX 0
01
XX 0
10
01
10
X00
0123
0123
X01
1230
4
X10
2301
1032
2301
X11
3012
3210
000
01234567
01234567
001
12345670
10325476
010
23456701
23016745
8
011
34567012
100
45670123
32107654
45670123
101
56701234
54761032
110
67012345
67452301
111
70123456
76543210
Full Page*
nnn
Cn Cn+1 Cn+2……
-
* Page length is a function of I/O organization and column addressing X32 (CA0 ~ CA7):
Full page = 256bits
1. Command Truth Table
Command
Symbol CKE /CS /RAS /CAS /WE BA0, A10 A11,
n-1 n
BA1 A9~A10
Ignore Command
DESL H X H X
X XXX
X
No Operation
NOP H X L H
H HXX
X
Burst Stop
BSTH H X L H H L X X
X
Read
READ H X L H
L HVL
V
Read with Auto Pre-charge READA H X L H
L HVH
V
Write
WRIT H X L H L L V L
V
Write with Auto Pre-charge WRITA H X L L
H HVH
V
Bank Activate
ACT H X L L
H HVV
V
Pre-charge Select Bank
PRE H X L L
H LVL
X
Pre-charge All Banks
PALL H X L L
H L XH
X
Mode Register Set
MRS H X L L
L LLL
V
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
Dec. 2013
12/18
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SeitenGesamt 18 Seiten
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