(PDF) P0903BDG Datasheet - 56A, 25V, N-Channel Enhancement Mode MOSFET

Número de pieza	P0903BDG
Descripción	56A, 25V, N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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1. - 25V, N-Ch, MOSFET (Transistor) Hay una vista previa y un enlace de descarga de P0903BDG (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 56 35 160 Avalanche Current IAS 34 Avalanche Energy L=0.1mH EAS 60 Power Dissipation TC= 25 °C TC= 100°C PD 49 20 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.55 63 UNITS °C / W REV 1.0 1 2014/5/7 1 page P0903BDG N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/7 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet P0903BDG.PDF ]

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PDF P0903BDG Data sheet ( Hoja de datos )