(PDF) P062ABDF Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P062ABDF
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P062ABDF N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 7mΩ @VGS = 10V ID 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 75 50 170 Avalanche Current IAS 45 Avalanche Energy L=0.1mH EAS 100 Power Dissipation TC= 25 °C TC= 100°C PD 54 32.75 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.6 MAXIMUM 2.3 62.5 UNITS °C / W REV 1.0 1 2014/4/29 1 page P062ABDF N-Channel Logic Level Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/4/29 5 Page

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PDF P062ABDF Data sheet ( Hoja de datos )