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Teilenummer | P0165ED |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P0165ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
10.6Ω @VGS = 10V
ID
1A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
1
0.7
3
0.5
Avalanche Energy3
EAS 1.25
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
37
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
3.3
UNITS
°C / W
REV 1.0
1 2016/1/14
P0165ED
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:2500pcs/Reel
REV 1.0
6 2016/1/14
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P0165ED Schematic.PDF ] |
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