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Teilenummer | P2610AI |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P2610AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID
32A
TO-251
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
TC = 25 °C
TC = 100 °C
L = 0.1mH
ID
IDM
IAS
EAS
32
20
100
53
139
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
PD
TJ, TSTG
TL
42
17
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
3
62.5
UNITS
°C / W
Ver 1.0
1 2012/8/22
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P2610AI Schematic.PDF ] |
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