P9006EL Datasheet PDF - UNIKC
| Part Number | P9006EL | |
| Description | P-Channel Enhancement Mode MOSFET | |
| Manufacturers | UNIKC | |
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There is a preview and P9006EL download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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P9006EL
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID
-4A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TA = 25 °C
TA = 100 °C
ID
IDM
-4
-2.7
-30
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
30
Power Dissipation
TA = 25 °C
TA = 100 °C
PD
3.125
1.25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Limited by Package.
2Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
40
60
UNITS
°C / W
Ver 1.0
1 2012/4/12
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P9006EL
P-Channel Enhancement Mode MOSFET
Ver 1.0
5 2012/4/12
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P9006EL electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P9006EL.PDF Datasheet ] | |
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