(PDF) P7006BL Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P7006BL
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P7006BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 70mΩ @VGS = 10V ID 3.8A SOT-223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1，2 Avalanche Current TA = 25 °C TA = 70 °C ID IDM IAS 3.8 3 25 16 Avalanche Energy3 EAS 12.8 Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, Tstg 2 1.3 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3L = 0.1mH, IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C. UNITS °C / W REV 1.0 1 2013-11-25 1 page P7006BL N-Channel Enhancement Mode MOSFET REV 1.0 5 2013-11-25 5 Page

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PDF P7006BL Data sheet ( Hoja de datos )