(PDF) PE6H6BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PE6H6BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE6H6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.8mΩ @VGS = 10V ID 36A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current4 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 100 Continuous Drain Current TA = 25 °C TA = 70 °C ID 14 11 Avalanche Current IAS 22 Avalanche Energy L =0.1mH EAS 24 Power Dissipation Power Dissipation3 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 20 8.3 3.1 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2016/12/19 1 page PE6H6BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/12/19 5 Page

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PDF PE6H6BA Data sheet ( Hoja de datos )