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Teilenummer | PE6B0SA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten PE6B0SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5mΩ @VGS = 10V
ID
42A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
42
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
26
16
Pulsed Drain Current1
TA= 70 °C
IDM
13
80
Avalanche Current
IAS 25
Avalanche Energy
L =0.1mH
EAS
31
TC = 25 °C
17.8
Power Dissipation4
TC = 100 °C
TA = 25 °C
PD
7
2.7
TA = 70 °C
1.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t≦10s
Steady-State
RqJA
RqJA
45
65
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 27A
4The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.1
1 2016/6/13
PE6B0SA
N-Channel Enhancement Mode MOSFET
A. Marking Information(此产品代码为:J5)
B. Tape&Reel Information:5000pcs/Reel
REV 1.1
6 2016/6/13
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ PE6B0SA Schematic.PDF ] |
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