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Teilenummer | PE614DX |
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Beschreibung | Dual N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten PE614DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 12.5mΩ @VGS = 4.5V
ID
30A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±10
Continuous Drain Current3
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
TC= 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
L = 0.1mH
TC= 25 °C
TC = 100 °C
TA = 25 °C
TA= 70°C
ID
IDM
IAS
EAS
PD
30
19
11
9
80
22
24
17.8
7
2.5
1.6
ESD Class
HBM
2kV
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
7
Junction-to-Ambient2
RqJA
50
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 7A.
UNITS
°C / W
REV 1.2
1 2014/6/24
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PE614DX Schematic.PDF ] |
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