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PE5E4BA Schematic ( PDF Datasheet ) - UNIKC

Teilenummer PE5E4BA
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller UNIKC
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Gesamt 8 Seiten
PE5E4BA Datasheet, Funktion
PE5E4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID
31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±25
Continuous Drain Current3
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
31
19
90
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
10
8
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24
TC = 25 °C
18
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
7
1.7
TA = 70 °C
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
70
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 27A.
UNITS
°C / W
REV 1.0
1 2016/12/16






PE5E4BA Datasheet, Funktion
PE5E4BA
N-Channel Enhancement Mode MOSFET
A. Marking Information(此产品代码为:L8
B. Tape&Reel Information:5000pcs/Reel
REV 1.0
6 2016/12/16

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