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Teilenummer | PE534BA |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten PE534BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
31
Continuous Drain Current2
Tc = 100 °C
TA = 25 °C
ID
20
10
Pulsed Drain Current1
TA= 70 °C
IDM
8
50
Avalanche Current
IAS 24.5
Avalanche Energy
L =0.1mH
EAS
30
TC = 25 °C
15
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
1.6
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
75
Junction-to-Case
RqJC
8
1Pulse width limited by maximum junction temperature.
2Package limitation current is 18A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-28
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ PE534BA Schematic.PDF ] |
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