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Teilenummer | PE5C6JZ |
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Beschreibung | Dual N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten PE5C6JZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
24V 5.5mΩ @VGS = 4.5V
ID
54A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 24
Gate-Source Voltage
VGS ±12
TC = 25 °C
54
Continuous Drain Current2
TC = 100 °C
TA = 25 °C
ID
34
16
Pulsed Drain Current1
TA= 70 °C
IDM
13
90
Avalanche Current
IAS 28
Avalanche Energy
L =0.1mH
EAS
39
TC = 25 °C
27
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
11
2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
50
Junction-to-Case
RqJC
4.5
1Pulse width limited by maximum junction temperature.
2Package limitation current is 13A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2016/7/20
PE5C6JZ
Dual N-Channel Enhancement Mode MOSFET
A. Marking Information(此产品代码为:K2)
B. Tape&Reel Information:5000pcs/Reel
REV 1.0
6 2016/7/20
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ PE5C6JZ Schematic.PDF ] |
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