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PB555BA Schematic ( PDF Datasheet ) - UNIKC

Teilenummer PB555BA
Beschreibung P-Channel Enhancement Mode MOSFET
Hersteller UNIKC
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Gesamt 8 Seiten
PB555BA Datasheet, Funktion
PB555BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
25mΩ @VGS = -10V
ID
-8A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
-8
-6.4
30
Power Dissipation3
TA= 25 °C
TA= 70°C
PD
2.7
1.7
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
45
65
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe,in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.1
1 2015/9/24






PB555BA Datasheet, Funktion
PB555BA
P-Channel Enhancement Mode MOSFET
A. Marking Information(此产品代码为:B8)
B. Tape&Reel Information:3000pcs/Reel
REV 1.1
6 2015/9/24

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