Datenblatt-pdf.com


PA504EV Schematic ( PDF Datasheet ) - UNIKC

Teilenummer PA504EV
Beschreibung P-Channel Enhancement Mode MOSFET
Hersteller UNIKC
Logo UNIKC Logo 




Gesamt 5 Seiten
PA504EV Datasheet, Funktion
PA504EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
150mΩ @VGS = -10V
ID
-2.7A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TA = 25 °C
TA = 70 °C
ID
IDM
-2.7
-2.1
-15
Avalanche Current
IAS -10
Avalanche Energy
L = 0.1mH
EAS
5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.8
1.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient
RqJA
70
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
°C / W
REV 1.0
1 2014/9/17





SeitenGesamt 5 Seiten
PDF Download[ PA504EV Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
PA504EMP-Channel Enhancement Mode MOSFETUNIKC
UNIKC
PA504EVP-Channel Enhancement Mode MOSFETUNIKC
UNIKC

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche