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Teilenummer | P5506NVG |
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Beschreibung | N&P-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P5506NVG
N- & P- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
N-
Channel
P-
Channel
60 55mΩ @VGS = 10V
-60 80mΩ @VGS = 10V
ID
4.5A
-3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
N- P-
Channel Channe
60 -60
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
4.5 -3.5
4 -3
Pulsed Drain Current1
IDM 20 -20
Avalanche Current
IAS 18 23
Avalanche Energy
L =0.1mH
EAS
16 26
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
REV 1.1
1 2014/5/28
P5506NVG
N- & P- Channel Enhancement Mode MOSFET
REV 1.1
6 2014/5/28
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P5506NVG Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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