(PDF) PM606BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PM606BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PM606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 5 3.7 Pulsed Drain Current1 IDM 15 Power Dissipation TA = 25 °C TA = 70 °C PD 0.8 0.5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 146 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014/9/10 1 page PM606BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/10 5 Page

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PDF PM606BA Data sheet ( Hoja de datos )