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Teilenummer | P1403EV8 |
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Beschreibung | P-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P1403EV8
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
14mΩ @VGS = -10V
ID
- 12A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1 , 2
TA = 25 °C
TA = 70 °C
ID
IDM
-12
-10
-65
Avalanche Current
IAS -39
Avalanche Energy
L = 0.1mH
EAS
89
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
3
2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
40
UNITS
°C / W
Ver 1.0
1 2012/4/13
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P1403EV8 Schematic.PDF ] |
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