(PDF) PA203EMG Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PA203EMG
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PA203EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 120mΩ @VGS = -10V ID -2.6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -2.6 -2.1 -10 Power Dissipation TA = 25 °C TA = 70 °C PD 1.25 0.8 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 100 80 UNITS °C / W REV 1.1 1 2014/7/28 1 page PA203EMG P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2014/7/28 5 Page

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PDF PA203EMG Data sheet ( Hoja de datos )