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Teilenummer | PB210BM |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 9 Seiten PB210BM
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
1.3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
1.3
0.8
18
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16.5
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.75
0.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
166
60
UNITS
°C / W
Rev 1.1
1 2016/8/1
PB210BM
N-Channel Enhancement Mode MOSFET
Rev 1.1
6 2016/8/1
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ PB210BM Schematic.PDF ] |
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