(PDF) PB210BC Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PB210BC
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 240mΩ @VGS = 10V ID 2.2A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 2.2 1.8 8 Avalanche Current IAS 6 Avalanche Energy L = 1mH EAS 18 Power Dissipation TA = 25 °C TA = 100 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 50 Junction-to-Case RqJC 10 1Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2015/5/26 1 page PB210BC N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/5/26 5 Page

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PDF PB210BC Data sheet ( Hoja de datos )