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Número de pieza | P1610AK | |
Descripción | N-Channel Field Effect Transistor | |
Fabricantes | NIKO-SEM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P1610AK (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! NIKO-SEM
N-Channel Enhancement Mode
P1610AK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID
36A
D
G
S
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation4
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
110
±20
36
23
100
11
8.8
13.5
91
50
20
4.4
2.8
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
UNITS
Junction-to-Ambient2
t ≦10s
RJA
28
Junction-to-Ambient2
Steady-State
RJA
54 °C / W
Junction-to-Case
Steady-State
RJC
2.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 25A.
4The Power dissipation is based on RJA t ≦10s value.
REV 1.0
1
F-04-1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet P1610AK.PDF ] |
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