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Teilenummer | P6006BI |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P6006BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 65mΩ @VGS = 10V
ID
18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11.8
34
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.5 °C / W
Ver 1.0
1 2012/4/12
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P6006BI Schematic.PDF ] |
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