Datenblatt-pdf.com


P6006BI Schematic ( PDF Datasheet ) - UNIKC

Teilenummer P6006BI
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller UNIKC
Logo UNIKC Logo 




Gesamt 5 Seiten
P6006BI Datasheet, Funktion
P6006BI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 65mΩ @VGS = 10V
ID
18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11.8
34
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.5 °C / W
Ver 1.0
1 2012/4/12





SeitenGesamt 5 Seiten
PDF Download[ P6006BI Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
P6006BDN-Channel Field Effect TransistorNIKO-SEM
NIKO-SEM
P6006BDN-Channel Enhancement Mode MOSFETUNIKC
UNIKC
P6006BIN-Channel Field Effect TransistorNIKO-SEM
NIKO-SEM
P6006BIN-Channel Enhancement Mode MOSFETUNIKC
UNIKC

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche