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Teilenummer | P0460AI |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P0460AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID
4A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
4
2.4
20
3
Avalanche Energy3
EAS 45
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
31
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.6
62.5
UNITS
°C / W
REV 1.0
1 2014-3-5
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P0460AI Schematic.PDF ] |
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