|
|
Teilenummer | P8010BD |
|
Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 5 Seiten P8010BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
±20
15
9
35
12
Avalanche Energy
L =0.1mH
EAS
7.2
MOSFET dV/dt Ruggedness
Peak Diode Recovery dV/dt2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
dV/dt
PD
TJ, Tstg
16.2
4.1
46
18
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25℃
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.7 °C / W
REV 1.2
1 2014/5/26
| ||
Seiten | Gesamt 5 Seiten | |
PDF Download | [ P8010BD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
P8010BD | N-Channel Field Effect Transistor | NIKO-SEM |
P8010BD | N-Channel Enhancement Mode MOSFET | UNIKC |
P8010BIS | N-Channel Enhancement Mode MOSFET | UNIKC |
P8010BIS | N-Channel Field Effect Transistor | NIKO-SEM |
P8010BT | N-Channel Field Effect Transistor | NIKO-SEM |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |