(PDF) P1520ED Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1520ED
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1520ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 198mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 15 9.3 45 Avalanche Current IAS 15 Avalanche Energy L=1.2mH EAS 135 Power Dissipation TC= 25 °C TC= 100°C PD 83 33 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.5 62.5 UNITS °C / W REV 1.0 1 2015/10/12 1 page P1520ED N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/10/12 5 Page

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PDF Descargar	[ Datasheet P1520ED.PDF ]

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PDF P1520ED Data sheet ( Hoja de datos )