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Teilenummer | CJZM718 |
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Beschreibung | N-Channel MOSFET and PNP Transistor | |
Hersteller | JCET | |
Logo | ||
Gesamt 7 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-8L-I Plastic-Encapsulate Transistors-MOSFETS
CJZM718 N-ch MOSFET and PNP Transistor
V(BR)DSS/BVCEO
20V
-25V
RDS(on)MAX
0.7Ω@4.5V
0.85Ω@2.5V
/
ID/IC
0.5A
-3A
DFNWB3×2-8L-I
&
'
FEATURE
High DC current gain
Low Threshold
Small package DFNWB3x2-8L-I
Including a CJP718 transistor and a CJ1012
MOSFET independently in a package
MARKING:
APPLICATION
Charging circuit
Other power management in portable equipments
Equivalent Circuit
C C SG
8 765
front
back
1 2 34
C E BD
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
N-MOSFET
VDS
VGS
ID
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current - Pulse
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient (note1)
Thermal Resistance from Junction to Ambient (note2)
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature
Value
-25
-25
-7.5
-3
20
±6
0.5
2
1
175
110
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
V
A
V
V
A
A
W
℃/W
℃/W
℃
℃
℃
C,Aug,2016
DFNWB3X2-8L-I Package Outline Dimensions
N4
N5
TOP VIEW
N1 N8
BOTTOM VIEW
SIDE VIEW
DFNWB3X2-8L-I
www.cj-elec.com
6
C,Aug,2016
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ CJZM718 Schematic.PDF ] |
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