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C5819 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer C5819
Beschreibung NPN Transistor - 2SC5819
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 6 Seiten
C5819 Datasheet, Funktion
2SC5819
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819
High-Speed Switching Applications
DC-DC Converter Applications
Industrial Applications
Unit: mm
· High DC current gain: hFE = 400 to 1000 (IC = 0.15 A)
· Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
· High-speed switching: tf = 45 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
t = 10 s
DC
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
(Note 1)
Tj
Tstg
40
30
20
7
1.5
2.5
150
2.0
1.0
150
-55 to 150
V
V
V
V
A
mA
W
°C
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 40 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.15 A
VCE = 2 V, IC = 0.5 A
IC = 0.5 A, IB = 10 mA
IC = 0.5 A, IB = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ~- 12 V, RL = 24 W
IB1 = -IB2 = 17 mA
Min Typ. Max Unit
¾ ¾ 100 nA
¾ ¾ 100 nA
20 ¾ ¾ V
400 ¾ 1000
200 ¾
¾
¾ ¾ 0.12 V
¾ ¾ 1.10 V
¾ 18 ¾ pF
¾ 43 ¾
¾ 295 ¾
ns
¾ 45 ¾
1 2001-12-17






C5819 Datasheet, Funktion
This datasheet has been download from:
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Datasheets for electronics components.

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