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PDF P0460ETFA Data sheet ( Hoja de datos )
| Número de pieza | P0460ETFA | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode P0460ETFA:TO-220F
Field Effect Transistor
P0460ETFAS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.5Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
4
2.5
20
2
20
36.8
14.7
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
TYPICAL
MAXIMUM
3.4
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
600
VDS = VGS, ID = 250A
2 2.8 4
VDS = 0V, VGS = ±30V
±100
VDS = 600V, VGS = 0V , TC = 25 °C
1
VDS = 480V, VGS = 0V , TC = 100 °C
10
V
nA
A
REV 1.0
1
G-30-2
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P0460ETFA.PDF ] | |
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