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Teilenummer | P0950ETF |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | NIKO-SEM | |
Logo | ||
Gesamt 4 Seiten NIKO-SEM
N-Channel Enhancement Mode P0950ETF:TO-220F
Field Effect Transistor
P0950ETFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
0.88Ω
ID
9A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
500
±30
9
5.7
36
4
80
37
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
3.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
500
V
23
4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 500V, VGS = 0V , TC = 25 °C
IDSS
VDS = 400V, VGS = 0V , TC = 100 °C
1
A
10
REV 1.0
1
F-14-2
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ P0950ETF Schematic.PDF ] |
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