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PDF P0270ATFS Data sheet ( Hoja de datos )
| Número de pieza | P0270ATFS | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode P0270ATF(S)
Field Effect Transistor
TO-220F:P0270ATF
TO-220FS:P0270ATFS
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
700V
RDS(ON)
6.3Ω
ID
2A
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Energy3
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±30
2
1
8
5
26
10
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH, starting TJ = 25°C
TYPICAL
MAXIMUM
4.7
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
700
2.5 3.8
4.5
V
VDS = 0V, VGS = ±30V
±100 nA
VDS = 700V, VGS = 0V
VDS = 560V, VGS = 0V, TJ = 125 °C
25
A
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
5.5 6.3
1.5
Ω
S
REV 2.1
1
D-16-5
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P0270ATFS.PDF ] | |
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