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PDF R6046FNZ1 Data sheet ( Hoja de datos )
| Número de pieza | R6046FNZ1 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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R6046FNZ1
Nch 600V 46A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
600V
0.098W
46A
120W
lOutline
TO-247
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
4) Drive circuits can be simple.
*1 BODY DIODE
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
-
450
C9
Marking
R6046FNZ1
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
600
46
23
115
30
142
5.4
23
120
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.10 - Rev.A
1 page  
R6046FNZ1
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
1000
100
PW = 100ms
PW = 1ms
10
1
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 10ms
0.1
Ta=25ºC
Single Pulse
0.01
0.1 1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 30ºC/W
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01 0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 10 100 1000
Pulse Width : PW [s]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/13
2013.10 - Rev.A
5 Page 
R6046FNZ1
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS=0V
Pulsed
10
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
10000
1000
1
Ta=125ºC
Ta=75ºC
0.1 Ta=25ºC
Ta= -25ºC
0.01
0.0
0.5 1.0 1.5
Source - Drain Voltage : VSD [V]
100
10
1
0
Ta=25ºC
VGS = 0V
di / dt = 100A / ms
Pulsed1
1 10 100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
11/13
2013.10 - Rev.A
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet R6046FNZ1.PDF ] | |
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