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Número de pieza | RF201L4S | |
Descripción | Super Fast Recovery Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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No Preview Available ! Data Sheet
Super Fast Recovery Diode
RF201L4S
Series
Standard Fast Recovery
Dimensions (Unit : mm)
2.6±0.2
Applications
General rectification
76 62
①②
0.1±0.02
0.1
Features
1)Small power mold type.(PMDS)
2)Low switching loss
3)Low forward voltage
Construction
Silicon epitaxial planer
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture date
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
Land size figure (Unit : mm)
2.0
PMDS
Structure
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
Absolute maximum ratings (TI=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
D≤0.5
Direct voltage
Glass epoxy substrate mounted
Tl=108°C
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Limits
400
400
1.5
50
150
55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal resistance
Rth(j-l)
Conditions
IF=1.5A
VR=400V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Min.
-
-
-
-
Typ. Max.
0.95 1.2
0.01 1
20 30
- 23
2.8MAX
Unit
V
μA
ns
°C/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
1 page Notes
Notice
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More detail product informations and catalogs are available, please contact us.
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet RF201L4S.PDF ] |
Número de pieza | Descripción | Fabricantes |
RF201L4S | Super Fast Recovery Diode | ROHM Semiconductor |
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