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CD4052BMS Schematic ( PDF Datasheet ) - Intersil Corporation

Teilenummer CD4052BMS
Beschreibung CMOS Analog Multiplexers/Demultiplexers
Hersteller Intersil Corporation
Logo Intersil Corporation Logo 




Gesamt 12 Seiten
CD4052BMS Datasheet, Funktion
CD4051BMS, CD4052BMS
CD4053BMS
December 1992
CMOS Analog
Multiplexers/Demultiplexers*
Features
Description
• Logic Level Conversion
• High-Voltage Types (20V Rating)
• CD4051BMS Signal 8-Channel
• CD4052BMS Differential 4-Channel
• CD4053BMS Triple 2-Channel
• Wide Range of Digital and Analog Signal Levels:
- Digital 3V to 20V
- Analog to 20Vp-p
• Low ON Resistance: 125(typ) Over 15Vp-p Signal
Input Range for VDD - VEE = 15V
• High OFF Resistance: Channel Leakage of ±100pA
(typ) at VDD - VEE = 18V
• Logic Level Conversion:
- Digital Addressing Signals of 3V to 20V (VDD - VSS
= 3V to 20V)
- Switch Analog Signals to 20Vp-p (VDD - VEE = 20V);
See Introductory Text
• Matched Switch Characteristics: RON = 5(typ) for
VDD - VEE = 15V
• Very Low Quiescent Power Dissipation Under All Digi-
tal Control Input and Supply Conditions: 0.2µW (typ)
at VDD - VSS = VDD - VEE = 10V
• Binary Address Decoding on Chip
• 5V, 10V and 15V Parametric Ratings
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Break-Before-Making Switching Eliminates Channel
Overlap
Applications
CD4051BMS, CD4052BMS and CD4053BMS analog multi-
plexers/demultiplexers are digitally controlled analog
switches having low ON impedance and very low OFF leak-
age current. Control of analog signals up to 20V peak-to-
peak can be achieved by digital signal amplitudes of 4.5V to
20V (if VDD-VSS = 3V, a VDD-VEE of up to 13V can be con-
trolled; for VDD-VEE level differences above 13V, a VDD-
VSS of at least 4.5V is required). For example, if VDD =
+4.5V, VSS = 0, and VEE = -13.5V, analog signals from -
13.5V to +4.5V can be controlled by digital inputs of 0 to 5V.
These multiplexer circuits dissipate extremely low quiescent
power over the full VDD-VSS and VDD-VEE supply voltage
ranges, independent of the logic state of the control signals.
When a logic “1” is present at the inhibit input terminal all
channels are off.
The CD4051BMS is a single 8 channel multiplexer having
three binary control inputs, A, B, and C, and an inhibit input.
The three binary signals select 1 of 8 channels to be turned
on, and connect one of the 8 inputs to the output.
The CD4052BMS is a differential 4 channel multiplexer hav-
ing two binary control inputs, A and B, and an inhibit input.
The two binary input signals select 1 of 4 pairs of channels
to be turned on and connect the analog inputs to the out-
puts.
The CD4053BMS is a triple 2 channel multiplexer having
three separate digital control inputs, A, B, and C, and an
inhibit input. Each control input selects one of a pair of chan-
nels which are connected in a single pole double-throw con-
figuration.
The CD4051BMS, CD4052BMS and CD4053BMS are supplied
in these 16 lead outline packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
*CD4051B Only
*H4X
†H4T
H1E
H6W
†CD4052B, CD4053 Only
• Analog and Digital Multiplexing and Demultiplexing
• A/D and D/A Conversion
• Signal Gating
* When these devices are used as demultiplexers the “CHANNEL
IN/OUT” terminals are the outputs and the “COMMON OUT/IN” ter-
minals are the inputs.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-937
File Number 3316






CD4052BMS Datasheet, Funktion
Specifications CD4051BMS, CD4052BMS, CD4053BMS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
Propagation Delay Time
SYMBOL
CONDITIONS
IDD VDD = 20V, VIN = VDD or GND
VNTH VDD = 10V, ISS = -10µA
VTN VDD = 10V, ISS = -10µA
VTP
VTP
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
F
TPHL
TPLH
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
NOTES
1, 4
1, 4
1, 4
TEMPERATURE
+25oC
+25oC
+25oC
MIN
-
-2.8
-
1, 4
+25oC
0.2
1, 4
+25oC
-
1
1, 2, 3, 4
+25oC
+25oC
VOH >
VDD/2
-
3. See Table 2 for +25oC limit.
4. Read and Record
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25oC
Limit
UNITS
µA
V
V
V
V
V
ns
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
ON Resistance
IDD ± 1.0µA
RONDEL10 ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
PDA (Note 1)
100% 5004
1, 7, 9, Deltas
Final Test
100% 5004
2, 3, 8A, 8B, 10, 11
Group A
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Group D
Sample 5005
1, 2, 3, 8A, 8B, 9
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
READ AND RECORD
IDD, IOL5, IOH5A, RONDEL10
IDD, IOL5, IOH5A, RONDEL10
IDD, IOL5, IOH5A, RONDEL10
IDD, IOL5, IOH5A, RONDEL10
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9 Table 4
FUNCTION
OPEN
PART NUMBER CD4051BMS
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
7-942

6 Page









CD4052BMS pdf, datenblatt
CD4051BMS, CD4052BMS, CD4053BMS
Chip Dimensions and Pad Layouts
CD4051BMSH
CD4052BMSH
CD4053BMSH
Dimensions in parentheses are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch)
METALLIZATION: Thickness: 11kÅ 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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