SBW3320 Schematic ( PDF Datasheet ) - WINSEMI SEMICONDUCTOR

Teilenummer	SBW3320
Beschreibung	High Voltage Fast-Swit NPN Power Transistor
Hersteller	WINSEMI SEMICONDUCTOR
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Gesamt 7 Seiten SBW3320 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA TO3P SBW3320 General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms TO247 SBW3320W Value 500 400 7.0 15 30 5.0 10 80 150 -65 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol Parameter RθJc Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W Jal 2011 .Rev.2 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T02-1 TO3P(N) Package Dimension Unit :mm SBW3320 Steady, keep you advance 6 /7 6 Page
Seiten	Gesamt 7 Seiten
PDF Download	[ SBW3320 Schematic.PDF ]

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Besondere Datenblatt

Teilenummer	Beschreibung	Hersteller
SBW3320	High Voltage Fast-Swit NPN Power Transistor	WINSEMI SEMICONDUCTOR

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