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PDF APM7313 Data sheet ( Hoja de datos )
| Número de pieza | APM7313 | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM7313
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/6A
,
RDS(ON)=21mΩ(typ.)
@
V =10V
GS
RDS(ON)=27mΩ(typ.) @ VGS=4.5V
• Super High Dense Cell Design for Extremely
Low R
DS(ON)
• Reliable and Rugged
• SO-8 Package
Applications
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
D1 D1
D2 D2
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1 S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM 7313
APM7313 K :
H a n d lin g C o d e
Temp. Range
Package Code
APM 7313
XXXXX
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
VDSS
VGSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
30
±20
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
1
www.anpec.com.tw
1 page  
APM7313
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
100
10
1 TJ=125°C
TJ=-55°C
TJ=25°C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD-Source to Drain Voltage
80
60
40
20
0
0.01
Single Pulse Power
0.1 1
Time (sec)
10
Normalized Transient Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
0.01
1E-4
SINGLE
1E-3
1. Duty Cycle , D=t1/t2
2.
3.
4.
TSPJueMrr-fTaUAcn=eiPtMBDMoaZusthneJtA=eRdthJA=50°C/W
0.01 0.1
1
Square Wave Pulse Duration (sec)
10
Copyright ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet APM7313.PDF ] | |
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