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PDF 3DD13003F Data sheet ( Hoja de datos )
| Número de pieza | 3DD13003F | |
| Descripción | NPN Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13003F TRANSISTOR ( NPN )
TO-220F
FEATURE
Power Switching Applications
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
1. BASE
2. COLLECTOR
123
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance from Junction
to Ambient
Junction and Storage Temperature
700 V
400 V
9V
1.5 A
2W
62.5 ℃/W
-55~+150 ℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
I=c= 5mA,IE 0
700
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
Ic== 10mA,IB 0
=IE= 2mA, IC 0
400
9
V
V
Collector cut-off current
ICBO
=VCB=700V,IE 0
1 mA
Collector cut-off current
ICEO
=VCE=400V,IB 0
0.5 mA
Emitter cut-off current
IEBO
=VEB=9V, IC 0
1 mA
DC current gain
hFE(1)
hFE(2)
VCE=5V,IC=0.5 A
VCE=5V,IC=1.5 A
8
5
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB=250mA
0.6 V
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
VBE(sat)
fT
tf
ts
IC=1A, IB=250mA
VCE=10V,Ic=100mA
f =1MHz
IC= 1A,IB1=-IB2=0.2A
VCC=100V
IC=250mA
5
2
1.2 V
MHz
0.5 µs
4 µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
Range
2-2.5 (μs )
A2
2.5-3(μs )
B1
3-3.5(μs )
B2
3.5-4 (μs )
www.cj-elec.com
1
C,May,2016
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 3DD13003F.PDF ] | |
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