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PDF RJP30H2A Data sheet ( Hoja de datos )
| Número de pieza | RJP30H2A | |
| Descripción | Silicon N Channel IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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 1. - 360V, 35A, IGBT (Transistor)  Hay una vista previa y un enlace de descarga de RJP30H2A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Preliminary Datasheet
RJP30H2DPK-M0 / RJP30H2A
Silicon N Channel IGBT
High speed power switching
R07DS0467EJ0200
Rev.2.00
Jun 15, 2011
Features
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
High speed switching: tf = 100 ns typ, tf = 180 ns typ
Low leak current: ICES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
C
1
23
1. Gate
2. Collector
G 3. Emitter
4. Collector (Flange)
E
Absolute Maximum Ratings
Item
Collector to Emitter voltage
Gate to Emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
www.DataSheet.co.kr
Symbol
VCES
VGES
Ic
ic(peak) Note1
PC Note2
j-c
Tj
Tstg
Ratings
360
±30
35
250
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
W
°C/ W
°C
°C
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJP30H2DPK-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03 0.01
0.01
10 μ
100 μ
θj−c(t) = γs (t) θj−c
θj−c = 2.08°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Ic Monitor
Vin Monitor
RL
Rg
Vin = 15 V
D.U.T.
VCC
Waveform
90%
Vin 10%
90%
90%
Ic
www.DataSheet.co.kr
td(on)
10%
tr
ton
td(off)
toff
10%
tf
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RJP30H2A.PDF ] | |
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