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PDF CJU18P10 Data sheet ( Hoja de datos )
| Número de pieza | CJU18P10 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJU18P10 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU18P10 P-Channel Power MOSFET
V(BR)DSS
-100V
RDS(on)MAX
100mΩ@-10V
ID
-18A
TO-252-2L
GENERAL DESCRIPTION
The CJU18P10 uses advanced trench technology and design to provide excellent
RDS(on) with low gate charge. It can be used in a wide variety of applications. It is ESD
protested.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
VDS =-100V,ID =-18A
RDS(on) <100mΩ @ VGS=-10V (Typ:85mΩ)
ESD Protection
Advanced trench process technology
Reliable and rugged
High density cell design for ultra low On-Resistance
APPLICATION
Power management in notebook computer
Portable equipment and battery powered systems
MARKING
EQUIVALENT CIRCUIT
CJU18P10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
www.cj-elec.com
1
Value
-100
±20
-18
-72
220
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
A-1,Feb,2016
1 page  
To-252(4R)-2L Tape and Reel
www.cj-elec.com
$)HE
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJU18P10.PDF ] | |
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