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PDF CJU05N60 Data sheet ( Hoja de datos )
| Número de pieza | CJU05N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJU05N60 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU05N60
V(BR)DSS
600V
N-CHANNEL POWER MOSFET
RDS(on)MAX
2.5Ω@10V
ID
4.5 A
TO-252-2L(4R)
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
1. GATE
2. DRAIN
3. SOURCE
1
such as power suplies, converters, power motor controls and bridge
circuits.
FEATURES
z Low RDS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJU05N60
XXX
CJU05N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
2
3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation (note 2,Ta=25℃)
Maximum Power Dissipation (note 3,Tc=25℃)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
Tstg
www.cj-elec.com
1
Value
600
±30
4.5
250
1.25
120
100
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
D,Apr,2016
1 page  
To-252(4R)-2L Tape and Reel
www.cj-elec.com
'$SU
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJU05N60.PDF ] | |
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