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PDF CJPF06N70 Data sheet ( Hoja de datos )
| Número de pieza | CJPF06N70 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF06N70
V(BR)DSS
700V
N-Channel Power MOSFET
RDS(on)MAX
1.8Ω@10V
ID
6A
GENERAL DESCRIPTION
This is a high voltage power MOSFET and is designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche. This high speed
switching power MOSFET is usually used in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge circuits.
TO-220F
1. GATE
2. DRAIN
3. SOURCE
123
FEATURE
z Lowe gate charge
z Lowe Crss
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
MARKING
EQUIVALENT CIRCUIT
CJPF06N70
XXX
CJPF06N70= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
700
±30
6
24
270
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,May,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJPF06N70.PDF ] | |
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