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Número de pieza | CJP55H12 | |
Descripción | N-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJP55H12 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP55H12 N-Channel Power MOSFET
TO-220-3L-C
GENERAL DESCRIPTION
The CJP55H12 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. It can be used in a wide
variety of applications.
FEATURE
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
1. GATE
2. DRAIN
3. SOURCE
APPLICATION
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperure for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
55
±20
120
420
1100
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
A-3,Mar,2015
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CJP55H12.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJP55H12 | N-Channel MOSFET | JCET |
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